FMBS2383 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com FMBS2383 rev. a0 1 april 2011 FMBS2383 npn epitaxial silicon transistor features ? power amplifier ? collector-emitter voltage : v ceo =160v ? current gain bandwidth product : f t =120mhz absolute maximum ratings t a = 25c unless otherwise noted * note1) : minimum land pattern size electrical characteristics t a = 25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 160 v v ceo collector-emitter voltage 160 v v ebo emitter-base voltage 5 v i c collector cu rrent 800 ma i b base current 160 ma p d power dissipation 630 mw r ja * thermal resistance, junction to ambient 200 c/w t j junction temperature 150 c t stg storage temperature -55 to +150 c symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c = 10 a, i b = 0 160 v bv ceo collector-emitter breakdown voltage i c = 10ma, i b = 0 160 v bv ebo emitter-base breakdown voltage i e = 1ma, i c = 0 5 v i cbo collector cut- off current v cb = 120v, i e = 0 100 na i ebo emitter cut-off current v be = 5v, i c = 0 100 na h fe dc current gain v ce = 5v, i c = 100ma 80 160 v ce (sat) collector-emitter saturation voltage i c = 500ma, i b = 50ma 1.0 v v be (on) base-emitter on voltage v ce = 5v, i c = 500ma 1.0 v f t current gain bandwidth product v ce = 5v, i c = 100ma 120 mhz c ob output capacitance v cb = 10v, i e = 0, f = 1mhz 30 pf c c b c c e marking : 2383 1 2 3 6 5 4 supersot tm -6
FMBS2383 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com FMBS2383 rev. a0 2 typical performance characteristics figure 1. dc current gain figure 2. collector-emitter saturation voltage figure 3. base-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector-base cutoff current figure 6. emitter-base cutoff current 1 10 100 1000 10 100 1000 t a = 100 o c v ce = 5v h fe , dc current gain i c [ma], collector current t a = 125 o c t a = 75 o c t a = 25 o c 1 10 100 1000 0.01 0.1 1 v ce (sat),[v] saturation voltage i c [ma], collector current i c = 10 i b t a = 125 o c t a = 75 o c t a = 25 o c t a = 100 o c 1 10 100 1000 0.1 1 10 i c = 10 i b v be (sat)[v], saturation voltage i c [ma], collector current t a = 125 o c t a = 75 o c t a = 25 o c t a = 100 o c 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 100 200 300 400 500 v ce = 5v i c [ma], collector current v be (on) [v], base-emitter on voltage t a = 125 o c t a = 75 o c t a = 25 o c t a = 100 o c 10 100 0.01 0.1 1 10 100 i cbo [na], collector cut-off current v cb [v], collector-base voltage t a = 125 o c t a = 75 o c t a = 25 o c t a = 100 o c 12345678910 1e-3 0.01 0.1 1 10 100 i ebo [na], emitter cut-off current v eb [v], emitter-base voltage t a = 125 o c t a = 75 o c t a = 25 o c t a = 100 o c
FMBS2383 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com FMBS2383 rev. a0 3 typical performance characteristics (continued) figure 7. output capacitance figure 8. input capacitance figure 9. transient thermal resistance 024681012 10 15 20 25 30 35 40 c ob [pf], output capacitance v cb [v], collector-base voltage f = 1mhz 012345 100 150 200 250 c ib [pf], input capacitance v cb [v], collector-base voltage f = 1mhz 1e-4 1e-3 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 50% transient thermal resistance, rthja time(sec) single pulse 30% 10% 5% 2% d=1% rthja=200c/w
FMBS2383 ? npn epitaxial silicon transistor ? 2011 fairchild semiconductor corporation www.fairchildsemi.com FMBS2383 rev. a0 4 physical dimensions supersot tm -6 dimensions in millimeters
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